Tailored waveform generator - Axiom
Tailored bias waveform generator for dissociated plasma ion energy and density control during etching and deposition.
As semiconductor devices continue to scale, plasma etching and deposition processes require tighter control over ion energy and plasma density. Maintaining that control is essential for achieving smaller features and stable process performance.
Prodrive Technologies developed the tailored waveform generator - Axiom for advanced plasma biasing in etch and deposition applications. It enables tailored bias waveforms to support more accurate process control while helping reduce system complexity.
As semiconductor devices continue to scale, plasma etching and deposition processes require tighter control over ion energy and plasma density. Maintaining that control is essential for achieving smaller features and stable process performance.
Prodrive Technologies developed the tailored waveform generator - Axiom for advanced plasma biasing in etch and deposition applications. It enables tailored bias waveforms to support more accurate process control while helping reduce system complexity.
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Flexible waveform control
All waveform parameters (duty cycle, timing, voltages, slopes) can be varied.
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Single box solution
Control only a single box instead of multiple subsystems and remove slow and unpredictable matchboxes.
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High system efficiency
Achieve higher etch or deposition rates with lower power.
Features
- Flexible digital waveform control
- Programmable duty cycle
- Built-in high speed oscilloscope
- EtherCAT interface
- Common Exciter Interface (CEX)
- ON/OFF modulation
- No matchbox required
- Integrated DC-blocking capacitor
Benefits
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Improved process control, lower damage
Obtain optimal IEDF control by adjusting the waveform parameters with lower wafer damage.
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Reduced system complexity
Remove matchboxes, matchbox controllers and other external sensors by using a single box solution.
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Reduce process drift
Control of the waveform directly on the electrode enables lower process drift compared to matchbox RF biasing solutions.
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Enhanced system effiency
Improved etch rates and selectivity compared to RF biasing.
Application areas
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Plasma deposition
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Flat Panel Display processing
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Plasma Cleaning
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Plasma Dicing
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Plasma etching
Markets & industries
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Semiconductor
Image processing and defect classification
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Flat panel display
Components and solutions for LED, LCD, DLP, plasma and LCD displays
Product specifications
| Process targets | |
|---|---|
| Ion energy | Up to 1000eV |
| Ion current | Up to 700 mA |
| Electrical performance | |
| Input | External +400V / +24V Supply |
| Vprocess | 20 - 1500V |
| Vp-p Vprocess + Vslope | 20 - 2000V |
| Islope | 2.1A |
| Tperiod | 3.33 - 10 us |
| Environmental | |
| Ambient temperature | 15 to 35°C |
| Cooling | Air cooled |
| Environment | Laboratory / Controlled |
| Interfaces | |
| Phase | Common exciter |
| Synchronization | Synchronization (CEX) |
| Configuration / Monitoring | Ethernet (Toolsuite) / EtherCAT |
| Enabling / Disabling | I/O |
| Customization | |
| Customization is fully possible. Please contact us for further discussion. | |
Let’s find the right fit!
Whether you’re ready to order or need a solution built around your requirements, we’re here to help you move forward